| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STF12NM50ND is a single N-Channel MOSFET from the Metal Oxide technology family. It is rated for a maximum drain-source voltage (Vdss) of 500V and can handle a continuous drain current of 11A at a case temperature.
Key electrical characteristics include a maximum on-resistance (Rds On) of 380mOhm at 5.5A and 10V, an input capacitance (Ciss) of 850pF at 50V, and a gate charge (Qg) of 30nC at 10V. The gate threshold voltage (Vgs(th)) is a maximum of 5V at 250µA, with a maximum gate-to-source voltage (Vgs) of ±25V.
This MOSFET operates at a maximum junction temperature of 150°C and has a maximum power dissipation of 25W at the case temperature. It is housed in a TO-220-3 Full Pack package, suitable for through-hole mounting.
The STF12NM50ND is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
500V.
11A at Tc.
380mOhm at 5.5A, 10V.
TO-220FP (TO-220-3 Full Pack).
150°C (junction).
5V at 250µA.
±25V.