| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,500 pcs
|
6500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STF12NM50N is a single N-Channel MOSFET belonging to the MOSFET (Metal Oxide) technology family. It is designed for robust performance in power applications, featuring a maximum drain-to-source voltage (Vdss) of 500V and a continuous drain current (Id) of 11A at the case temperature.
Key electrical characteristics include a maximum on-resistance (Rds On) of 380mOhm at 5.5A and 10V, a gate charge (Qg) of 30nC at 10V, and an input capacitance (Ciss) of 940pF at 50V. The gate threshold voltage (Vgs(th)) is 4V at 250µA, with a maximum gate-to-source voltage (Vgs) of ±25V.
This MOSFET operates at temperatures up to 150°C (TJ) and has a maximum power dissipation of 25W (Tc). It is housed in a TO-220FP package and utilizes through-hole mounting.
The STF12NM50N is suitable for various power switching and control applications where high voltage and current handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
500V maximum.
11A at case temperature (Tc).
380mOhm maximum at Id=5.5A, Vgs=10V.
TO-220-3 Full Pack (TO-220FP), through-hole mounting.
4V maximum at Id=250µA.
30nC maximum at Vgs=10V.
150°C.