| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
49,488 pcs
|
49488 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STF12N65M2 is a single N-Channel MOSFET from the discrete semiconductor product category. It is designed with a 650V drain-to-source voltage (Vdss) and can handle a continuous drain current of 8A at the case temperature.
Key electrical characteristics include a maximum on-resistance (Rds On) of 500mOhm at 4A and 10V, a gate charge (Qg) of 16.5 nC maximum at 10V, and an input capacitance (Ciss) of 535 pF maximum at 100V. The gate threshold voltage (Vgs(th)) is 4V maximum at 250µA, and the maximum gate-to-source voltage is ±25V.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 25W at the case temperature. It is housed in a TO-220FP package and features through-hole mounting.
The STF12N65M2 utilizes MOSFET technology and is specified as RoHS3 compliant, with an MSL rating of 1 and REACH unaffected status.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 650V.
The continuous drain current is 8A at case temperature.
The maximum on-resistance is 500mOhm at 4A drain current and 10V gate-source voltage.
The STF12N65M2 is available in a TO-220-3 Full Pack (TO-220FP) through-hole package.
The operating junction temperature range is -55°C to 150°C.
The maximum gate threshold voltage is 4V at 250µA drain current.
The maximum gate charge is 16.5nC at 10V gate-source voltage.