| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
462 pcs
|
462 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This STMicroelectronics STF12N60M2 is a single N-Channel MOSFET with a maximum drain-to-source voltage (Vdss) of 600V and a continuous drain current (Tc) of 9A. It features a low on-resistance of 450mOhm at 4.5A and 10V gate drive, with a maximum gate charge (Qg) of 16nC at 10V.
The MOSFET operates at temperatures up to 150°C (TJ) and has a maximum power dissipation of 25W (Tc). It utilizes MOSFET (Metal Oxide) technology and has a gate threshold voltage (Vgs(th)) of 4V at 250µA. The maximum gate-source voltage is ±25V.
Packaged in a TO-220-3 Full Pack (TO-220FP) configuration, this component is designed for through-hole mounting. Its RoHS status is compliant, MSL is 1, and REACH status is unaffected, though these compliance details are unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 600V.
The continuous drain current is 9A at case temperature Tc.
The maximum on-resistance is 450mOhm at a gate-source voltage of 10V and drain current of 4.5A.
The STF12N60M2 is supplied in a TO-220-3 Full Pack (TO-220FP) through-hole package.
The maximum operating junction temperature is 150°C.
The maximum gate charge is 16nC at a gate-source voltage of 10V.
The maximum input capacitance is 538pF at a drain-source voltage of 100V.