| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,379 pcs
|
1379 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Style | |
| Mounting Type | |
| Number of Channels | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STF12N50M2 is an N-Channel enhancement mode power MOSFET manufactured by STMicroelectronics. It features a maximum drain-source voltage of 500V and continuous drain current of 10A, making it suitable for high-voltage switching applications. The device uses silicon technology with a single channel and is designed for efficient power conversion.
Switching performance is characterized by a typical rise time of 10.5 ns and fall time of 34.5 ns, with turn-on and turn-off delay times of 13.5 ns and 8 ns respectively. The gate charge is specified at 15 nC maximum at 10V, and the input capacitance is 560 pF at 100V drain-source voltage. These parameters support high-frequency operation with minimized switching losses.
The STF12N50M2 is offered in a TO-220FP-3 through-hole package with an operating junction temperature range from -55°C to 150°C. Maximum power dissipation is 85W. The package style facilitates easy mounting on printed circuit boards for prototyping and production runs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
TO-220FP-3 through-hole package.
-55°C to 150°C (junction temperature).
500V.
10A at case temperature.
325 mOhm maximum at 5A drain current and 10V gate-source voltage.
2V maximum.
85W maximum.