| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STF12N50DM2 is an N-channel power MOSFET from STMicroelectronics. It is designed for high-voltage switching applications with a maximum drain-source voltage of 500V and a continuous drain current of 11A (Tc). The device features a low on-resistance of 350mOhm maximum at 5.5A and 10V gate drive, enabling efficient power conversion.
Key electrical characteristics include a gate charge of 16nC at 10V and an input capacitance of 628pF at 100V, facilitating fast switching. The gate threshold voltage is 5V maximum at 250µA, and the maximum gate-source voltage is ±25V. The junction temperature range is -55°C to 150°C.
The MOSFET is supplied in a TO-220-3 Full Pack (TO-220FP) through-hole package, suitable for manual or automated assembly. The device is marked as RoHS compliant and REACH unaffected, though these compliance declarations are unverified. It is commonly used in power supplies, inverters, motor drives, and other high-voltage power management circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
500V.
TO-220-3 Full Pack (TO-220FP).
-55°C to 150°C junction temperature.
11A at Tc.
350mOhm maximum at 5.5A and 10V gate drive.
16nC at 10V.
628pF at 100V.