| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
100,000 pcs
|
100000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,150 pcs
|
2150 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STF11NM60ND is a robust N-Channel MOSFET designed for various power electronics applications. It features a high drain-source voltage rating of 600V and can handle a continuous drain current of 10A at a case temperature (Tc).
Key electrical characteristics include a maximum on-resistance (Rds On) of 450mOhm at 5A and 10V gate-source voltage, and a gate charge (Qg) of 30nC at 10V. The input capacitance (Ciss) is rated at 850pF at 50V.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ). It is housed in a TO-220FP package and utilizes through-hole mounting.
The STF11NM60ND is built using MOSFET (Metal Oxide) technology, providing efficient switching capabilities for power management circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V maximum.
10A at case temperature (Tc).
450mOhm maximum at 5A drain current and 10V gate drive.
-55°C to 150°C junction temperature.
TO-220-3 Full Pack (TO-220FP) through-hole.
30nC maximum at 10V gate voltage.
5V maximum at 250µA drain current.