| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | 647 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STF11NM60N is a high-performance N-channel Power MOSFET from the MDmesh™ II series, utilizing advanced technology for low on-resistance and gate charge. This device is rated for a drain-source voltage (Vdss) of 600V and can handle a continuous drain current (Id) of 10A at 25°C case temperature.
Key electrical characteristics include a maximum on-resistance (Rds(on)) of 450mOhm at 5A and 10V gate-source voltage, and a gate threshold voltage (Vgs(th)) of 4V at 250µA. The input capacitance (Ciss) is 850pF at 50V, and the gate charge (Qg) is 31nC at 10V.
This MOSFET is designed for demanding high efficiency converters and switching applications. It features a maximum operating junction temperature of 150°C and a power dissipation of 25W at 25°C case temperature. The STF11NM60N is housed in a TO-220FP package and is suitable for through-hole mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
10A at Tc=25°C.
450mOhm maximum at 5A drain current and 10V gate-source voltage.
TO-220-3 Full Pack (TO-220FP).
Maximum junction temperature is 150°C.
MDmesh II technology.
31nC at 10V gate-source voltage.