STF11NM50N The STMicroelectronics STF11NM50N is an N-channel Power MOSFET designed for switching applications. It offers a 500V drain-source voltage and 8.5A continuous current.
Mfr Part #:

STF11NM50N

Available from 3 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STF11NM50N is an N-channel Power MOSFET designed for switching applications. It offers a 500V drain-source voltage and 8.5A continuous current.
✓ Total Stock: 10,151 pcs
$ Price Range: $2.56

STF11NM50N Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
5,050 pcs
5050 pcs On Request 1 On Request On Request 14+ On Request On Request
Non-Authorised Inventory information
3,450 pcs
3450 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,651 pcs
1651 pcs On Request 1 On Request On Request On Request On Request On Request

STF11NM50N Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Thermal Resistance
Vgs (Max)
Vgs(th) (Max) @ Id

STF11NM50N Description

Short technical summary and product information.

The STMicroelectronics STF11NM50N is an N-channel Power MOSFET utilizing MDmesh™ II technology. It is designed for demanding high efficiency converters and switching applications.

 

Key electrical specifications include a 500V drain-source voltage (Vdss) and a maximum continuous drain current of 8.5A at 25°C. The on-resistance (Rds On) is a maximum of 470mOhm at 4.5A and 10V gate-source voltage. Input capacitance (Ciss) is 547pF at 50V, and gate charge (Qg) is 19nC at 10V.

 

This MOSFET operates at a maximum junction temperature of 150°C and has a maximum power dissipation of 25W at 25°C case temperature. It is packaged in a TO-220FP package and features through-hole mounting.

 

Features include 100% avalanche tested, low input capacitance, and low gate charge, making it suitable for high efficiency power conversion designs.

STF11NM50N Quick Information

Product Type: Power MOSFET
Canonical Name: STMicroelectronics STF11NM50N N-Channel Power MOSFET
Subcategory: N-Channel

STF11NM50N Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STF11NM50N Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STF11NM50N Features

  • 500V drain-source voltage rating.
  • 8.5A continuous drain current.
  • 470mOhm maximum on-resistance.
  • Low input capacitance and gate charge.
  • TO-220FP package with through-hole mounting.

STF11NM50N Applications

  • High voltage switching power supplies.
  • Power factor correction circuits.
  • Motor control applications.
  • DC-DC converters.

STF11NM50N FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the STF11NM50N?

The maximum drain-source voltage is 500 V.

What is the continuous drain current of the STF11NM50N?

The continuous drain current is 8.5A at 25°C.

What is the maximum on-resistance for the STF11NM50N?

The maximum on-resistance is 470mOhm at 4.5A and 10V.

What is the operating temperature range for this MOSFET?

The maximum operating junction temperature is 150°C.

What package type is the STF11NM50N available in?

The STF11NM50N is available in a TO-220FP package.

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