| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
346 pcs
|
346 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request | |
|
50 pcs
|
50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STF11N65M2 is a single N-Channel MOSFET designed for power applications. It features a high drain-source voltage rating of 650V and a continuous drain current of 7A.
Key electrical characteristics include a maximum on-state resistance of 670mOhm at 3.5A and 10V, an input capacitance of 410pF at 100V, and a gate charge of 12.5nC at 10V. The device operates within a temperature range of -55°C to 150°C.
This MOSFET utilizes Metal Oxide Semiconductor technology and is housed in a TO-220FP package, suitable for through-hole mounting. Its specifications make it a candidate for various power switching and control circuits where high voltage and moderate current handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V.
TO-220-3 Full Pack (TO-220FP).
-55°C to 150°C (junction).
7A at case temperature.
25W at case temperature.
12.5nC at 10V gate voltage.
670mOhm at 3.5A drain current and 10V gate voltage.