| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This STMicroelectronics MOSFET, part number STF11N60M2-EP, is an N-Channel device designed for power switching applications. It features a maximum drain-source voltage (Vds) of 600V and a continuous drain current of 7.5A at a case temperature (Tc).
The device has a low on-resistance (Rds On) of 595mOhm at 3.75A and 10V gate-source voltage (Vgs). The gate charge (Qg) is 12.4nC maximum at 10V Vgs, and the input capacitance (Ciss) is 390pF maximum at 100V Vds. The threshold voltage (Vgs(th)) is 4.75V maximum at 250µA.
Operating across a temperature range of -55°C to 150°C (TJ), this MOSFET is housed in a TO-220FP package and is suitable for through-hole mounting. It has a maximum power dissipation of 25W (Tc). The component is listed as RoHS3 compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) is 600V.
The continuous drain current is 7.5A at the case temperature.
The maximum on-resistance (Rds On) is 595mOhm at 3.75A and 10V Vgs.
It is supplied in a TO-220FP package.
The operating temperature range is -55°C to 150°C (TJ).
Yes, it is RoHS3 compliant.