| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,700 pcs
|
2700 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STF11N60DM2 is a single N-Channel MOSFET from the MOSFET (Metal Oxide) technology family. It is designed for power applications with a maximum drain-to-source voltage (Vds) of 600V and a continuous drain current (Id) of 10A at 25°C case temperature. The MOSFET has a low on-resistance (Rds On) of 420mOhm at 5A, 10V gate-to-source voltage, and a gate threshold voltage (Vgs(th)) of 5V at 250µA.
This component operates within a temperature range of -55°C to 150°C (TJ). Key electrical characteristics include an input capacitance (Ciss) of 614pF at 100V and a gate charge (Qg) of 16.5nC at 10V. The maximum gate-to-source voltage is ±25V.
The STF11N60DM2 is packaged in a TO-220-3 Full Pack (TO-220FP) configuration and is designed for through-hole mounting. It offers a maximum power dissipation of 25W at 25°C case temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 600V.
The package is TO-220-3 Full Pack, also known as TO-220FP, with through-hole mounting.
The operating junction temperature range is -55°C to 150°C.
The maximum continuous drain current is 10A at case temperature of 25°C.
The maximum on-resistance is 420mOhm at 5A drain current and 10V gate-source voltage.
The maximum gate charge is 16.5nC at 10V gate-source voltage and 100V drain-source voltage.
The maximum input capacitance is 614pF at 100V drain-source voltage.