| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STF10N62K3 is an N-channel MOSFET manufactured by STMicroelectronics. It features a drain-to-source voltage rating of 620V and a maximum gate threshold voltage of 4.5V at 100µA drain current. The device has an input capacitance of 1250pF at Vds=50V and a gate charge of 42nC at Vgs=10V.
This MOSFET is designed for high-voltage switching applications such as power supplies and converters. The TO-220FP package provides through-hole mounting for efficient heat dissipation.
Key electrical characteristics include low gate charge for fast switching and moderate input capacitance for manageable drive requirements. The 620V rating allows operation in 400V and higher bus voltage systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
620V.
1250pF at Vds=50V.
42nC at Vgs=10V.
4.5V at Id=100µA.