STF10N60M2 The STMicroelectronics STF10N60M2 is an N-Channel MOSFET designed for power applications. It offers a 600V drain-to-source voltage and a 7.5A current rating.
Mfr Part #:

STF10N60M2

Available from 3 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STF10N60M2 is an N-Channel MOSFET designed for power applications. It offers a 600V drain-to-source voltage and a 7.5A current rating.
✓ Total Stock: 44,124 pcs
$ Price Range: $2.56

STF10N60M2 Available from 3 distributors

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✓ Non-Authorised
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40,824 pcs
40824 pcs On Request 1 On Request On Request 21+ On Request On Request
Non-Authorised Inventory information
2,000 pcs
2000 pcs On Request 1 On Request On Request On Request On Request On Request
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1,300 pcs
1300 pcs On Request 1 On Request On Request On Request On Request On Request

STF10N60M2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STF10N60M2 Description

Short technical summary and product information.

The STMicroelectronics STF10N60M2 is an N-Channel MOSFET belonging to the Transistors - FETs, MOSFETs - Single category. This component is designed for power switching applications, featuring a high drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 7.5A at a case temperature (Tc).

 

Key electrical characteristics include a maximum power dissipation of 25W (Tc), an Rds On (Max) of 600mOhm at 4A and 10V, and a gate charge (Qg) of 13.5nC at 10V. The input capacitance (Ciss) is rated at 400pF at 100V. The gate threshold voltage (Vgs(th)) is 4V at 250µA, with a maximum gate-to-source voltage (Vgs) of ±25V.

 

This MOSFET operates within a temperature range of -55°C to 150°C (TJ). It is housed in a TO-220-3 Full Pack package, designed for through-hole mounting. The technology used is MOSFET (Metal Oxide).

 

Compliance information indicates RoHS3 compliance, MSL 1 Unlimited, and REACH Unaffected status. However, these compliance details are from existing database entries and are considered low confidence, requiring verification with official documentation.

STF10N60M2 Quick Information

Product Type: MOSFET
Canonical Name: STMicroelectronics STF10N60M2 N-Channel MOSFET
Subcategory: N-Channel

STF10N60M2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STF10N60M2 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STF10N60M2 Features

  • 600V drain-to-source voltage.
  • 7.5A continuous drain current.
  • 600mOhm Rds On at 4A/10V.
  • TO-220FP package for through-hole mounting.
  • Operates from -55°C to 150°C.

STF10N60M2 Applications

  • Suitable for power switching circuits.
  • Used in high voltage applications.
  • Ideal for power supply designs.
  • Component in motor control systems.

STF10N60M2 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the STF10N60M2?

The maximum drain-to-source voltage (Vdss) is 600V.

What is the continuous drain current rating?

The continuous drain current rating is 7.5A at the case temperature.

What is the Rds On (Max) for this MOSFET?

The Rds On (Max) is 600mOhm when measured at 4A and 10V.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the STF10N60M2 in?

It is supplied in a TO-220-3 Full Pack package, also referred to as TO-220FP.

How is the STF10N60M2 mounted?

The STF10N60M2 is designed for through-hole mounting.

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