| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,000 pcs
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2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STF10N60DM2 is a single N-Channel MOSFET belonging to the discrete semiconductor product category. It is designed for power switching applications, offering a high drain-source voltage (Vdss) of 600V and a continuous current capability of 8A at the case temperature (Tc).
Key electrical characteristics include a maximum Rds On resistance of 530mOhm at 4A and 10V Vgs, an input capacitance (Ciss) of 529pF at 100V, and a gate charge (Qg) of 15nC at 10V Vgs. The gate threshold voltage (Vgs(th)) is a maximum of 5V at 250µA, and the maximum gate-source voltage (Vgs) is ±25V.
This MOSFET is housed in a TO-220FP package, suitable for through-hole mounting. It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 25W (Tc). The device is specified with RoHS3 compliance, MSL 1, and REACH unaffected status.
This component is suitable for various power electronics designs requiring a robust and reliable N-channel MOSFET with a 600V rating.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600 V.
TO-220-3 Full Pack (TO-220FP) with through-hole mounting.
-55°C to 150°C (junction).
530 mOhm at 4A, 10V.
15 nC at 10V.
529 pF at 100V.