| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,321 pcs
|
1321 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STF10N105K5 is a single N-Channel MOSFET from the discrete semiconductor product category. It is designed for high voltage applications, offering a maximum drain-to-source voltage (Vdss) of 1050V and a continuous drain current of 6A at a case temperature (Tc).
Key electrical characteristics include a maximum on-state resistance (Rds On) of 1.3 Ohm at 3A and 10V Vgs, an input capacitance (Ciss) of 545 pF at 100V Vds, and a gate charge (Qg) of 21.5 nC at 10V Vgs. The gate threshold voltage (Vgs(th)) is a maximum of 5V at 100µA, and the maximum gate-source voltage is 30V.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ). It is housed in a TO-220FP package and features a through-hole mounting type. The technology used is MOSFET (Metal Oxide).
Compliance information indicates RoHS3 compliance and an MSL rating of 1. REACH status is unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 1050V.
The operating junction temperature range is -55°C to 150°C.
The device is available in a TO-220-3 Full Pack (TO-220FP) through-hole package.
The maximum continuous drain current is 6A at case temperature Tc.
The maximum on-resistance (Rds(on)) is 1.3 Ohm at 3A drain current and 10V gate-source voltage.
The maximum gate threshold voltage (Vgs(th)) is 5V at 100µA drain current.
The maximum gate charge (Qg) is 21.5nC at 10V gate-source voltage.