| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STF10LN80K5 is an N-Channel MOSFET belonging to the discrete semiconductor products category. This component is designed for applications requiring high voltage handling capabilities, featuring a maximum drain-to-source voltage (Vdss) of 800V.
Key electrical characteristics include a continuous drain current (Id) of 8A (Tc) and a maximum on-resistance (Rds On) of 630mOhm at 4A and 10V. The gate-to-source voltage (Vgs) maximum is ±30V, with a gate threshold voltage (Vgs(th)) of 5V at 100µA. Input capacitance (Ciss) is rated at 427 pF @ 100V, and gate charge (Qg) is a maximum of 15 nC @ 10V.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 25W (Tc). It utilizes MOSFET (Metal Oxide) technology.
The component is supplied in a TO-220FP package and is designed for through-hole mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
800V.
8A at case temperature.
630mΩ at 10V gate-source voltage and 4A drain current.
5V maximum at 100µA drain current.
TO-220-3 Full Pack (TO-220FP), through-hole mount.
-55°C to 150°C (junction).
15 nC maximum at 10V gate-source voltage.