| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,900 pcs
|
9900 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STF100N10F7 is an N-Channel MOSFET manufactured by STMicroelectronics. It is designed for switching and amplification applications requiring a maximum drain-to-source voltage of 100V and a continuous drain current of 45A at case temperature Tc.
This device has a maximum power dissipation of 30W at Tc, making it suitable for moderate power switching circuits. The part is housed in a TO-220FP fully isolated package, which provides electrical isolation between the mounting tab and the die.
The STF100N10F7 is a single MOSFET component categorized under discrete semiconductor products. It is commonly used in power management, DC-DC converters, and motor control circuits where N-channel enhancement mode operation is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 100V.
The maximum continuous drain current is 45A at case temperature Tc.
The maximum power dissipation is 30W at case temperature Tc.