| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STE70NM50 is an N-Channel MOSFET from STMicroelectronics, designed for high-power switching applications. It features a drain-source breakdown voltage of 500V (minimum) and a continuous drain current rating of 70A at 25°C case temperature. The device achieves a low on-resistance of 0.05Ω at 30A with 10V gate drive, minimizing conduction losses. With a maximum power dissipation of 600W and a junction-to-case thermal resistance of 0.2°C/W, it is suitable for demanding thermal environments. The MOSFET is packaged in an ISOTOP package for chassis mount installation, providing robust thermal and electrical performance. The gate threshold voltage is 5V maximum, allowing compatibility with standard gate drive voltages. Input capacitance is 7500pF, which influences switching behavior. The operating junction temperature range is up to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
Minimum 500V.
ISOTOP (ISOTOP®) for chassis mount.
150°C.
±30V.
70A at 25°C case temperature.