| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STE180NE10 is an N-Channel MOSFET designed for power applications. It offers a drain-to-source voltage (Vdss) of 100V and can handle a continuous drain current of 180A at a case temperature (Tc).
This MOSFET has a maximum on-resistance (Rds On) of 6 Ohm when driven at 10V with a drain current of 40A. The gate threshold voltage (Vgs(th)) is a maximum of 4V at 250µA, and the maximum gate-to-source voltage is ±20V. Input capacitance (Ciss) is 21000 pF at 25V, and gate charge (Qg) is 795 nC at 10V.
Operating within a temperature range of -55°C to 150°C (TJ), the STE180NE10 has a maximum power dissipation of 360W (Tc). It is housed in an ISOTOP package and designed for chassis mounting.
Compliance includes RoHS3 status, MSL 1, and REACH unaffected. The technology used is MOSFET (Metal Oxide).
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 100 V.
The continuous drain current is 180A (Tc).
The Rds On is a maximum of 6 Ohm at 40A drain current and 10V gate-source voltage.
The operating temperature range is -55°C to 150°C (TJ).
The STE180NE10 is supplied in an ISOTOP package.
The STE180NE10 is designed for chassis mounting.