| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Failure Rate | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STE110NS20FD is an N-Channel MOSFET with a robust design for demanding applications. It offers a high drain-source voltage rating of 200V and a continuous drain current capability of 110A at 25°C.
Key electrical characteristics include a maximum on-resistance (Rds On) of 24mOhm at 50A and 10V gate drive, and a gate threshold voltage (Vgs(th)) of 4V at 250µA. The device also features a maximum gate charge (Qg) of 504 nC at 10V and a maximum gate-source voltage (Vgs) of ±20V. Input capacitance (Ciss) is rated at 7900 pF at 25V.
With a maximum power dissipation of 500W (Tc) and an operating junction temperature of 150°C, this MOSFET is suitable for thermal management. It is housed in an ISOTOP® package and designed for chassis mounting, facilitating efficient heat dissipation in power systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
200V.
ISOTOP B (chassis mount).
150°C.
110A at 25°C.
24mOhm maximum.
504nC maximum at 10V.
7900pF maximum at 25V.