STD9NM60N The STMicroelectronics STD9NM60N is an N-Channel MOSFET designed for 600V operation with a continuous drain current of 6.5A. It features a surface mount DPAK package.
Mfr Part #:

STD9NM60N

Available from 2 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STD9NM60N is an N-Channel MOSFET designed for 600V operation with a continuous drain current of 6.5A. It features a surface mount DPAK package.
✓ Total Stock: 37,078 pcs
$ Price Range: $2.56

STD9NM60N Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
19,578 pcs
19578 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
17,500 pcs
17500 pcs On Request 1 On Request On Request On Request On Request On Request

STD9NM60N Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STD9NM60N Description

Short technical summary and product information.

The STMicroelectronics STD9NM60N is a single N-Channel MOSFET with a maximum drain-source voltage (Vdss) of 600V and a continuous drain current of 6.5A at case temperature.

 

This MOSFET utilizes Metal Oxide Semiconductor technology. Key electrical characteristics include a maximum gate-source voltage (Vgs) of ±25V, a gate threshold voltage (Vgs(th)) of 4V at 250µA, and a maximum on-resistance (Rds On) of 745mOhm at 3.25A and 10V gate-source voltage. The input capacitance (Ciss) is 452pF at 50V, and the gate charge (Qg) is 17.4nC at 10V.

 

With a maximum power dissipation of 70W (Tc) and an operating temperature up to 150°C (TJ), this device is suitable for various power applications. It is housed in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, designed for surface mounting.

 

The RoHS status is listed as RoHS3 Compliant, Moisture Sensitivity Level (MSL) is 1 Unlimited, and REACH status is Unaffected. However, these compliance details are unverified.

STD9NM60N Quick Information

Product Type: MOSFET
Canonical Name: STMicroelectronics STD9NM60N N-Channel MOSFET
Subcategory: N-Channel

STD9NM60N Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STD9NM60N Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STD9NM60N Features

  • 600V drain-to-source voltage rating.
  • 6.5A continuous drain current capability.
  • Low 745mOhm maximum Rds On.
  • Surface mount DPAK package.
  • Operates up to 150°C junction temperature.

STD9NM60N Applications

  • Used in power supply circuits.
  • Suitable for motor control.
  • Applicable in lighting systems.
  • Ideal for general power switching.

STD9NM60N FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the STD9NM60N?

600V.

What is the maximum continuous drain current?

6.5A at case temperature.

What is the on-resistance of this MOSFET?

745mOhm maximum at 3.25A and 10V gate drive.

What is the operating junction temperature range?

Maximum 150°C.

What package does the STD9NM60N come in?

DPAK (TO-252-3) surface mount package.

What is the gate charge of the STD9NM60N?

17.4nC at 10V gate voltage.

What is the input capacitance?

452pF at 50V drain-source voltage.

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