| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
19,578 pcs
|
19578 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
17,500 pcs
|
17500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STD9NM60N is a single N-Channel MOSFET with a maximum drain-source voltage (Vdss) of 600V and a continuous drain current of 6.5A at case temperature.
This MOSFET utilizes Metal Oxide Semiconductor technology. Key electrical characteristics include a maximum gate-source voltage (Vgs) of ±25V, a gate threshold voltage (Vgs(th)) of 4V at 250µA, and a maximum on-resistance (Rds On) of 745mOhm at 3.25A and 10V gate-source voltage. The input capacitance (Ciss) is 452pF at 50V, and the gate charge (Qg) is 17.4nC at 10V.
With a maximum power dissipation of 70W (Tc) and an operating temperature up to 150°C (TJ), this device is suitable for various power applications. It is housed in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, designed for surface mounting.
The RoHS status is listed as RoHS3 Compliant, Moisture Sensitivity Level (MSL) is 1 Unlimited, and REACH status is Unaffected. However, these compliance details are unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
6.5A at case temperature.
745mOhm maximum at 3.25A and 10V gate drive.
Maximum 150°C.
DPAK (TO-252-3) surface mount package.
17.4nC at 10V gate voltage.
452pF at 50V drain-source voltage.