| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STD9N65M2 is a high-voltage N-Channel MOSFET. It features a maximum drain-source voltage (Vdss) of 650V and a continuous current rating of 5A (Tc).
Key electrical characteristics include a maximum on-resistance (Rds On) of 900mOhm at 2.5A and 10V, an input capacitance (Ciss) of 315pF at 100V, and a gate charge (Qg) of 10nC at 10V. The gate threshold voltage (Vgs(th)) is a maximum of 4V at 250µA, with a maximum gate-source voltage of ±25V.
This MOSFET operates at temperatures up to 150°C (TJ) and has a maximum power dissipation of 60W (Tc). It is constructed using MOSFET (Metal Oxide) technology.
The STD9N65M2 is available in a surface mount DPAK package (TO-252-3, DPak (2 Leads + Tab), SC-63), suitable for various electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 650V.
The continuous drain current is 5A at case temperature.
The maximum on-resistance is 900mOhm at 2.5A drain current and 10V gate-source voltage.
The device is available in a TO-252-3 (DPAK) surface mount package.
The maximum operating junction temperature is 150°C.
The maximum gate threshold voltage is 4V at 250µA drain current.