STD9N60M6 The STMicroelectronics STD9N60M6 is an N-Channel MOSFET designed for discrete applications. It features a 600V drain-to-source voltage and a 6A continuous current rating.
Mfr Part #:

STD9N60M6

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STD9N60M6 is an N-Channel MOSFET designed for discrete applications. It features a 600V drain-to-source voltage and a 6A continuous current rating.
✓ Total Stock: 2,500 pcs
$ Price Range: $2.56

STD9N60M6 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,500 pcs
2500 pcs On Request 1 On Request On Request On Request On Request On Request

STD9N60M6 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STD9N60M6 Description

Short technical summary and product information.

The STMicroelectronics STD9N60M6 is a single N-Channel MOSFET belonging to the discrete semiconductor product category. It is designed for surface mount applications and offers a robust 600V drain-to-source voltage (Vdss).

 

Key electrical characteristics include a maximum continuous drain current of 6A (Tc) and a maximum power dissipation of 76W (Tc). The on-resistance (Rds On) is specified at a maximum of 750mOhm at 3A and 10V gate drive. The device also features a gate charge (Qg) of 10 nC (Max) at 10V and an input capacitance (Ciss) of 273 pF (Max) at 100V.

 

Operating temperature ranges from -55°C to 150°C (TJ). The MOSFET is housed in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, commonly known as D-PAK. This surface mountable package is suitable for various electronic designs requiring efficient power switching.

 

This MOSFET utilizes Metal Oxide technology and is suitable for applications requiring a reliable N-Channel switching component. Its specifications make it a viable option for power management circuits and other discrete semiconductor applications.

STD9N60M6 Quick Information

Product Type: MOSFET
Canonical Name: STMicroelectronics STD9N60M6 N-Channel MOSFET
Subcategory: Single

STD9N60M6 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STD9N60M6 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STD9N60M6 Features

  • 600V drain-to-source voltage rating.
  • 6A continuous drain current capability.
  • 750mOhm maximum on-resistance.
  • Surface mount TO-252 (D-PAK) package.
  • Wide operating temperature range.

STD9N60M6 Applications

  • Used in high-voltage DC-DC converters.
  • Suitable for power supply switching circuits.
  • Ideal for motor control applications.
  • Used in LED lighting drivers.
  • Applicable in industrial power systems.

STD9N60M6 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the STD9N60M6?

The drain-to-source voltage (Vdss) for the STD9N60M6 is 600V.

What is the maximum continuous current for the STD9N60M6?

The maximum continuous current for the STD9N60M6 is 6A.

What is the on-resistance of the STD9N60M6?

The maximum on-resistance (Rds On) for the STD9N60M6 is 750mOhm at 3A and 10V.

What is the operating temperature range for the STD9N60M6?

The operating temperature range for the STD9N60M6 is -55°C to 150°C.

How is the STD9N60M6 mounted?

The STD9N60M6 is a surface mount device.

What package type is the STD9N60M6 in?

The STD9N60M6 is in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.

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