| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
102,500 pcs
|
102500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STD9N60M2 is a single N-Channel MOSFET belonging to the Transistors - FETs, MOSFETs - Single category. It is designed for power applications with a maximum drain-source voltage (Vdss) of 600V and a continuous drain current of 5.5A at a case temperature (Tc).
This MOSFET has a maximum on-resistance (Rds On) of 780mOhm when measured at 3A drain current and 10V gate-source voltage. The gate charge (Qg) is a maximum of 10nC at 10V, and the input capacitance (Ciss) is 320pF at 100V.
It operates at a maximum junction temperature of 150°C and can dissipate up to 60W of power at the case temperature. The gate threshold voltage (Vgs(th)) is 4V maximum at 250µA, and the maximum gate-source voltage is ±25V. The drive voltage is specified at 10V.
The STD9N60M2 is packaged in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package. It is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
150°C (junction temperature).
TO-252-3, DPak (2 Leads + Tab), SC-63 (DPAK surface mount).
780 mOhm maximum at 3A drain current and 10V gate-source voltage.
10 nC maximum at 10V gate-source voltage.
4V maximum at 250µA drain current.