STD9N10

The STMicroelectronics STD9N10 is an N-Channel Enhancement Mode Power MOS Transistor designed for various electronic applications. This component features a breakdown voltage of 100V and a maximum power dissipation of 45W. Its maximum operating temperature is rated at 175°C, making it suitable for demanding environments. The transistor has a drain-source on-resistance of 114mΩ at a gate-source voltage of 10V and a drain current of 15A, though a minimum resistance of 270mΩ is also specified. The gate-source voltage limit is ±20V. This device is typically surface mounted.

Key electrical characteristics include a 100V minimum breakdown voltage and a maximum power dissipation of 45W. The operating temperature range extends up to 175°C. The drain-source on-resistance is specified as 114mΩ at 10V Vgs and 15A Id, with a minimum value of 270mΩ also noted. The maximum gate-source voltage is ±20V. This MOSFET is designed for efficient power switching applications.

Designed for integration into electronic circuits, the STD9N10 is manufactured by STMicroelectronics. Its specifications make it a versatile component for power management tasks. The device is suitable for applications requiring reliable switching and power handling capabilities within its specified voltage and temperature limits. Further details on specific applications and performance characteristics can be found in the manufacturer's documentation.