STD9HN65M2 The STMicroelectronics STD9HN65M2 is an N-Channel MOSFET designed for surface mount applications. It offers a 650V drain-to-source voltage and a continuous drain current of 5.5A.
Mfr Part #:

STD9HN65M2

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STD9HN65M2 is an N-Channel MOSFET designed for surface mount applications. It offers a 650V drain-to-source voltage and a continuous drain current of 5.5A.
✓ Total Stock: 2,500 pcs
$ Price Range: $2.56

STD9HN65M2 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,500 pcs
2500 pcs On Request 1 On Request On Request 15+ On Request On Request

STD9HN65M2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STD9HN65M2 Description

Short technical summary and product information.

The STMicroelectronics STD9HN65M2 is a single N-Channel MOSFET belonging to the MOSFET (Metal Oxide) technology family. It is designed for surface mount applications and comes in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.

 

Key electrical specifications include a maximum drain-to-source voltage (Vdss) of 650V and a continuous drain current (Id) of 5.5A at Tc. The device features a maximum on-resistance (Rds On) of 820mOhm at 2.5A and 10V, and a gate charge (Qg) of 11.5nC at 10V. Input capacitance (Ciss) is rated at 325pF at 100V.

 

This MOSFET operates at temperatures up to 150°C (TJ) and has a maximum power dissipation of 60W (Tc). The gate-to-source voltage (Vgs) has a maximum rating of ±25V, with a gate threshold voltage (Vgs(th)) of 4V at 250µA. The drive voltage for Rds On is 10V.

 

Environmental compliance includes RoHS3 compliance and an MSL rating of 1. The mounting type is Surface Mount.

STD9HN65M2 Quick Information

Product Type: MOSFET
Canonical Name: STMicroelectronics STD9HN65M2 N-Channel MOSFET
Subcategory: Single

STD9HN65M2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STD9HN65M2 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STD9HN65M2 Features

  • 650V drain-to-source voltage rating.
  • 5.5A continuous drain current.
  • 820mOhm maximum on-resistance.
  • Surface mount DPAK package.
  • RoHS3 compliant.

STD9HN65M2 Applications

  • Suitable for power switching circuits.
  • Ideal for DC-DC converters.
  • Used in power supply designs.
  • Applicable in motor control.

STD9HN65M2 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the STD9HN65M2?

The maximum drain-to-source voltage (Vdss) is 650V.

What is the continuous drain current of the STD9HN65M2?

The continuous drain current (Id) is 5.5A at Tc.

What is the on-resistance of the STD9HN65M2?

The maximum on-resistance (Rds On) is 820mOhm at 2.5A and 10V.

What is the package type for the STD9HN65M2?

The package type is TO-252-3, DPak (2 Leads + Tab), SC-63.

How is the STD9HN65M2 mounted?

The mounting type is Surface Mount.

What is the operating temperature range for this MOSFET?

The operating temperature is up to 150°C (TJ).

Is the STD9HN65M2 RoHS compliant?

Yes, the STD9HN65M2 is RoHS3 Compliant.

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