| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
22,500 pcs
|
22500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STD8NM50N from STMicroelectronics is a high-performance N-Channel MOSFET designed for power switching applications. It features a maximum drain-source voltage (Vdss) of 500V and can handle a continuous current of 5A (Tc). The MOSFET has a low on-resistance (Rds On) of 790mOhm at 2.5A and 10V gate-source voltage, contributing to efficient power transfer.
With a maximum power dissipation of 45W (Tc), this device is suitable for demanding applications. The operating temperature range is up to 150°C (TJ). The STD8NM50N utilizes MOSFET (Metal Oxide) technology and is packaged in a TO-252-3, DPak (2 Leads + Tab), SC-63, designed for surface mounting.
Key electrical characteristics include a gate charge (Qg) of 14 nC at 10V and an input capacitance (Ciss) of 364 pF at 50V. The gate threshold voltage (Vgs(th)) is 4V at 250µA, and the maximum gate-source voltage (Vgs) is ±25V. The drive voltage for maximum Rds On is 10V.
This MOSFET is RoHS3 compliant and has an MSL rating of 1 Unlimited. Its surface mount capability makes it versatile for various PCB designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) for the STD8NM50N is 500 V.
The STD8NM50N has a continuous current rating of 5 A.
The maximum power dissipation for the STD8NM50N is 45 W.
The on-resistance (Rds On) of the STD8NM50N is a maximum of 790 mOhm at 2.5A and 10V.
The operating temperature for the STD8NM50N is up to 150°C.
The STD8NM50N is an N-Channel MOSFET.
The STD8NM50N is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.