| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STD8N65M5 is an N-channel MOSFET manufactured by STMicroelectronics. It is housed in a DPAK (TO-252) surface-mount package and provides high-voltage switching capability.
The device has a maximum drain-to-source voltage of 650 V and a maximum continuous drain current of 7 A at case temperature. Its maximum on-resistance is 600 mΩ at a drain current of 3.5 A and a gate-source voltage of 10 V. The maximum gate-to-source voltage is ±25 V, and the maximum gate threshold voltage is 5 V at 250 µA.
The total gate charge is 15 nC at 10 V, and the input capacitance is 690 pF at 100 V drain-source voltage. These values are relevant for estimating gate drive power and switching behavior. Maximum power dissipation is 70 W at case temperature.
The MOSFET operates up to a maximum junction temperature of 150 °C. Its surface-mount DPAK package enables compact PCB assembly, and the electrical characteristics make it suitable for high-voltage power circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 650 V.
The continuous drain current is 7 A at case temperature.
The maximum on-resistance is 600 mΩ at 3.5 A and 10 V gate-source voltage.
The maximum junction temperature is 150 °C.
The device comes in a TO-252-3 (DPAK) surface-mount package.
The gate charge is 15 nC at a gate-source voltage of 10 V.
The maximum gate threshold voltage is 5 V at 250 µA drain current.