| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
571,020 pcs
|
571020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,593 pcs
|
3593 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STD8N60DM2 is an N-Channel power MOSFET designed for high-voltage switching applications. It is rated for a maximum drain-to-source voltage of 600V and a continuous drain current of 8A at case temperature (Tc). The device offers a maximum on-resistance of 600mOhm when driven with a 10V gate signal at 4A drain current.
Key electrical characteristics include a maximum gate threshold voltage of 5V at 100µA drain current, a maximum gate charge of 13.5nC at 10V, and an input capacitance of 375pF at 100V drain-source voltage. The device can dissipate up to 85W at case temperature and operates at a maximum junction temperature of 150°C.
The STD8N60DM2 is housed in a TO-252-3 (DPak) surface-mount package, also known as SC-63, with a supplier device package designation of DPAK. It is designed for surface-mount assembly, making it suitable for automated manufacturing processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 600V.
The maximum continuous drain current is 8A at case temperature (Tc).
The maximum on-resistance (Rds On) is 600mOhm at 4A drain current and 10V gate drive.
The STD8N60DM2 is available in a TO-252-3 (DPak) surface-mount package, also known as SC-63.
The maximum operating junction temperature (TJ) is 150°C.
The maximum gate threshold voltage (Vgs(th)) is 5V at 100µA drain current.
The maximum input capacitance (Ciss) is 375pF at 100V drain-source voltage.