STD8N60DM2 The STMicroelectronics STD8N60DM2 is an N-Channel MOSFET designed for surface mount applications. It features a 600V drain-source voltage and an 8A continuous drain current.
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STD8N60DM2

Available from 3 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STD8N60DM2 is an N-Channel MOSFET designed for surface mount applications. It features a 600V drain-source voltage and an 8A continuous drain current.
✓ Total Stock: 577,113 pcs
$ Price Range: $2.56

STD8N60DM2 Available from 3 distributors

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✓ Non-Authorised
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571,020 pcs
571020 pcs On Request 1 On Request On Request On Request On Request On Request
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3,593 pcs
3593 pcs On Request 1 On Request On Request On Request On Request On Request
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2,500 pcs
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STD8N60DM2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STD8N60DM2 Description

Short technical summary and product information.

The STD8N60DM2 is an N-Channel power MOSFET designed for high-voltage switching applications. It is rated for a maximum drain-to-source voltage of 600V and a continuous drain current of 8A at case temperature (Tc). The device offers a maximum on-resistance of 600mOhm when driven with a 10V gate signal at 4A drain current.

 

Key electrical characteristics include a maximum gate threshold voltage of 5V at 100µA drain current, a maximum gate charge of 13.5nC at 10V, and an input capacitance of 375pF at 100V drain-source voltage. The device can dissipate up to 85W at case temperature and operates at a maximum junction temperature of 150°C.

 

The STD8N60DM2 is housed in a TO-252-3 (DPak) surface-mount package, also known as SC-63, with a supplier device package designation of DPAK. It is designed for surface-mount assembly, making it suitable for automated manufacturing processes.

STD8N60DM2 Quick Information

Product Type: MOSFET
Canonical Name: STD8N60DM2 N-Channel MOSFET
Subcategory: N-Channel

STD8N60DM2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STD8N60DM2 Estimated Pricing

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1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STD8N60DM2 Features

  • N-Channel MOSFET rated for 600V drain-source voltage.
  • Continuous drain current of 8A at case temperature.
  • Maximum on-resistance of 600mOhm at 10V gate drive.
  • Surface-mount DPAK package for automated assembly.
  • Maximum junction temperature rating of 150°C.

STD8N60DM2 Applications

  • Suitable for high-voltage power switching circuits.
  • Used in AC-DC converters and power supplies.
  • Ideal for motor control and inverter applications.
  • Applicable in lighting and LED driver circuits.

STD8N60DM2 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the STD8N60DM2?

The maximum drain-to-source voltage (Vdss) is 600V.

What is the continuous drain current rating of the STD8N60DM2?

The maximum continuous drain current is 8A at case temperature (Tc).

What is the on-resistance of the STD8N60DM2?

The maximum on-resistance (Rds On) is 600mOhm at 4A drain current and 10V gate drive.

What package does the STD8N60DM2 come in?

The STD8N60DM2 is available in a TO-252-3 (DPak) surface-mount package, also known as SC-63.

What is the maximum operating junction temperature of the STD8N60DM2?

The maximum operating junction temperature (TJ) is 150°C.

What is the gate threshold voltage of the STD8N60DM2?

The maximum gate threshold voltage (Vgs(th)) is 5V at 100µA drain current.

What is the input capacitance of the STD8N60DM2?

The maximum input capacitance (Ciss) is 375pF at 100V drain-source voltage.

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