STD86N3LH5 The STMicroelectronics STD86N3LH5 is an N-Channel MOSFET designed for power applications. It features a 30V drain-to-source voltage and 80A continuous drain current.
Mfr Part #:

STD86N3LH5

Available from 4 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STD86N3LH5 is an N-Channel MOSFET designed for power applications. It features a 30V drain-to-source voltage and 80A continuous drain current.
✓ Total Stock: 5,392 pcs
$ Price Range: $2.56

STD86N3LH5 Available from 4 distributors

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✓ Non-Authorised
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2,500 pcs
2500 pcs On Request 1 On Request On Request On Request On Request On Request
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1,424 pcs
1424 pcs On Request 1 On Request On Request On Request On Request On Request
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928 pcs
928 pcs On Request 1 On Request On Request 18+ On Request On Request
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540 pcs
540 pcs On Request 1 On Request On Request 1204+ On Request On Request

STD86N3LH5 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STD86N3LH5 Description

Short technical summary and product information.

The STMicroelectronics STD86N3LH5 is an N-Channel MOSFET with a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 80A at a case temperature (Tc).

 

This MOSFET offers a maximum power dissipation of 70W (Tc) and a low on-resistance (Rds On) of 5mOhm at 40A and 10V gate-source voltage. It has a gate charge (Qg) of 14 nC and an input capacitance (Ciss) of 1850 pF.

 

The device operates at temperatures up to 175°C (TJ) and is housed in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, suitable for surface mounting.

 

Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 2.5V at 250µA and a maximum gate-source voltage of ±20V. The technology used is MOSFET (Metal Oxide).

STD86N3LH5 Quick Information

Product Type: MOSFET
Canonical Name: STD86N3LH5 N-Channel MOSFET
Subcategory: N-Channel

STD86N3LH5 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STD86N3LH5 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STD86N3LH5 Features

  • 30V drain-to-source voltage.
  • 80A continuous drain current.
  • 70W maximum power dissipation.
  • Surface mount DPAK package.
  • Low 5mOhm on-resistance.

STD86N3LH5 Applications

  • Power switching applications.
  • High current DC-DC converters.
  • Motor control circuits.
  • Power management systems.

STD86N3LH5 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the STD86N3LH5?

30V.

What package does the STD86N3LH5 come in?

DPAK (TO-252-3, DPak, SC-63) surface-mount package.

What is the maximum operating junction temperature?

175°C.

What is the continuous drain current rating?

80A at case temperature.

What is the on-resistance at typical gate drive?

5mOhm at 40A, 10V gate drive.

What is the gate charge?

14nC at 5V gate voltage.

What is the input capacitance?

1850pF at 25V drain-source voltage.

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