| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,500 pcs
|
7500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STD80N6F7 is a single N-Channel MOSFET designed for power applications. It offers a drain-to-source voltage (Vdss) of 60V and can handle a continuous current of 40A at the case temperature. The MOSFET has a low on-resistance (Rds On) of 8mOhm at 20A and 10V Vgs, and a gate threshold voltage (Vgs(th)) of 4V at 250µA.
This device operates within a temperature range of -55°C to 175°C (TJ). It features a surface mountable DPAK (TO-252) package, also known as SC-63, making it suitable for various electronic designs. The input capacitance (Ciss) is 1600 pF at 30V, and the gate charge (Qg) is 25 nC at 10V.
Key electrical characteristics include a maximum gate-source voltage of ±20V and a maximum power dissipation of 100W (Tc). The technology used is MOSFET (Metal Oxide).
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 60V.
It is available in a TO-252-3 (DPak) surface-mount package.
The operating junction temperature range is -55°C to 175°C.
The maximum gate charge is 25 nC at 10V.
The maximum input capacitance is 1600 pF at 30V.
The maximum on-resistance is 8 mOhm at 20A and 10V.
The maximum gate threshold voltage is 4V at 250µA.