| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STD80N6F6 is an N-Channel MOSFET belonging to the OptiMOS™ series. It features a drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 80A at 25°C. The on-resistance (Rds On) is a maximum of 6.5mOhm at 40A and 10V gate-source voltage.
This MOSFET operates within a temperature range of -55°C to 175°C (TJ) and has a maximum power dissipation of 120W (Tc). Key electrical characteristics include a gate charge (Qg) of 122 nC at 10V and an input capacitance (Ciss) of 7480 pF at 25V. The gate-to-source voltage (Vgs) maximum is ±20V, with a gate threshold voltage (Vgs(th)) of 4.5V at 250µA.
The STD80N6F6 is packaged in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package. Its technology is MOSFET (Metal Oxide).
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 60V.
The continuous drain current (Id) is 80A at 25°C.
The maximum on-resistance (Rds On) is 6.5mOhm at 40A and 10V.
The operating temperature range is -55°C to 175°C (TJ).
The STD80N6F6 is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.
The STD80N6F6 is a surface mount device.