| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
245,000 pcs
|
245000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,357 pcs
|
1357 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STD80N4F6 is a single N-Channel MOSFET with a drain-source voltage rating of 40V and a continuous drain current capability of 80A at a case temperature (Tc).
This MOSFET features a low on-resistance (Rds On) of 6 mOhm maximum at 40A and 10V Vgs, ensuring efficient power transfer. It has a gate charge (Qg) of 36 nC maximum at 10V Vgs and an input capacitance (Ciss) of 2150 pF maximum at 25V Vds.
The device operates within a temperature range of -55°C to 175°C (TJ) and has a maximum power dissipation of 70W (Tc). It is constructed using MOSFET (Metal Oxide) technology.
Packaged in a surface mount DPAK (TO-252-3, DPak (2 Leads + Tab), SC-63) package, the STD80N4F6 is suitable for various power switching and control applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40V.
It is available in a DPAK (TO-252) surface-mount package.
-55°C to 175°C (junction temperature).
80A at Tc.
6mOhm maximum at 40A and 10V gate drive.
36nC at 10V.
70W at Tc.