| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STD80N450K6 is a single N-channel MOSFET utilizing Metal Oxide Semiconductor technology. It is rated for a drain-source voltage (Vdss) of 800V and can handle a continuous drain current (Id) of 10A at 25°C case temperature. The device features a maximum on-resistance (Rds On) of 450mOhm at 5A and 10V gate-source voltage, with a typical gate threshold voltage (Vgs(th)) of 4V at 100µA.
With a maximum power dissipation of 83W (Tc), the STD80N450K6 is suitable for various power management applications. It operates within a temperature range of -55°C to 150°C (TJ). The MOSFET has an input capacitance (Ciss) of 700pF at 400V and a gate charge (Qg) of 17.3nC at 10V.
This component comes in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, designed for surface mounting. It is specified with a maximum gate-source voltage (Vgs) of ±30V and requires a drive voltage of 10V. The RoHS status is compliant, and REACH is unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
800V maximum.
10A at 25°C case temperature.
450mOhm at Vgs=10V, Id=5A.
4V at 100µA drain current.
17.3nC at Vgs=10V.
-55°C to 150°C junction temperature.
TO-252-3 (DPak) surface mount package.