| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STD80N240K6 is a single N-channel MOSFET utilizing Metal Oxide Semiconductor technology. It is designed for high voltage applications with a Drain to Source Voltage (Vdss) of 800V.
Key electrical characteristics include a maximum continuous drain current of 16A at 25°C and a maximum on-resistance of 220mOhm at 7A and 10V. The device features a gate threshold voltage of up to 4V at 100µA and a maximum gate source voltage of ±30V. Input capacitance is rated at 1350 pF at 400V, and gate charge is a maximum of 25.9 nC at 10V.
With a maximum power dissipation of 105W (Tc), the STD80N240K6 is suitable for demanding power applications. It operates within a temperature range of -55°C to 150°C (TJ).
The MOSFET is housed in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, designed for surface mounting. This compact package facilitates efficient heat dissipation in various electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is 800V.
The continuous drain current is 16A at 25°C.
The maximum on-resistance is 220mOhm at 7A drain current and 10V gate-source voltage.
The STD80N240K6 is available in a D-PAK (TO-252) surface-mount package, also known as TO-252-3 or DPak (2 Leads + Tab).
The operating junction temperature range is -55°C to 150°C.
The maximum gate threshold voltage is 4V at 100µA drain current.
The maximum gate charge is 25.9nC at 10V gate-source voltage.