| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,020 pcs
|
6020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STD80N10F7 is a robust N-Channel MOSFET with a drain-source voltage rating of 100V and a continuous drain current capability of 70A at a case temperature.
This MOSFET offers a low on-resistance of 10mOhm maximum at 40A and 10V Vgs, ensuring efficient power transfer. It has a gate threshold voltage of 4.5V maximum at 250µA and a gate-to-source voltage range of ±20V.
Designed for surface mounting, the STD80N10F7 comes in a TO-252-3, DPak (2 Leads + Tab), SC-63 package. It operates within a temperature range of -55°C to 175°C (TJ) and has a maximum power dissipation of 85W (Tc).
Key electrical characteristics include an input capacitance of 3100 pF and a gate charge of 45 nC. This component is suitable for various power switching and control applications where high current and voltage handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 100V.
The continuous drain current (Id) is 70A at the case temperature.
The maximum on-resistance (Rds On) is 10mOhm when measured at 40A drain current and 10V gate-source voltage.
