| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
27,500 pcs
|
27500 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request | |
|
6,413 pcs
|
6413 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STD7NM80 is an N-Channel enhancement mode MOSFET designed for high voltage applications. It features a drain-source breakdown voltage of 800V and continuous drain current of 6.5A. The device has a maximum on-resistance of 1.05 ohms at 3.25A and 10V gate drive. Input capacitance is 620pF at 25V and total gate charge is 18nC at 10V. Maximum power dissipation is 90W. The MOSFET is housed in a DPAK surface mount package, suitable for automated assembly.
The low gate charge and capacitance make it suitable for high-frequency switching. The DPAK package offers good thermal performance for moderate power levels.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
800V.
6.5A.
90W.
1.05 ohms maximum at 3.25A and 10V gate drive.
620pF at 25V.
18nC at 10V.
N-Channel.