| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,748 pcs
|
1748 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STD7N80K5 is an N-Channel MOSFET with a Metal Oxide semiconductor technology. It is designed for applications requiring high voltage handling, featuring a maximum drain-to-source voltage (Vdss) of 800V and a continuous drain current of 6A at a case temperature.
This MOSFET has a low on-resistance of 1.2 Ohms maximum at 3A and 10V Vgs, contributing to efficient power handling with a maximum power dissipation of 110W. The gate-to-source voltage (Vgs) is rated at ±30V, with a gate threshold voltage (Vgs(th)) of 5V at 100µA. Input capacitance (Ciss) is 360pF at 100V, and gate charge (Qg) is 13.4nC at 10V.
The device operates within a temperature range of -55°C to 150°C (TJ). It is packaged in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package, making it suitable for various electronic designs.
The STD7N80K5 is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
800V.
6A at case temperature.
1.2Ohm maximum at 3A and 10V gate drive.
Surface-mount DPAK (TO-252-3, DPak, SC-63).
-55°C to 150°C junction temperature.
13.4nC maximum at 10V gate voltage.
360pF maximum at 100V drain-source voltage.