| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STD7N65M6 is an N-Channel MOSFET with a breakdown voltage of 650V and a continuous drain current rating of 5A at 25°C. This device is manufactured using MOSFET (Metal Oxide) technology and comes in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package, suitable for surface mounting.
Key electrical characteristics include a maximum on-resistance of 990mOhm at 2.5A and 10V, a maximum gate charge of 6.9 nC at 10V, and a maximum input capacitance of 220 pF at 100V. The gate threshold voltage is a maximum of 3.75V at 250µA, and the maximum gate-source voltage is ±25V. The device has a maximum power dissipation of 60W.
Operating within a temperature range of -55°C to 150°C (TJ), the STD7N65M6 is designed for reliability in demanding environments. Its surface mount package facilitates integration into compact electronic designs. The product status is listed as obsolete.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V
5A at case temperature 25°C
990mOhm maximum at 2.5A drain current and 10V gate voltage
-55°C to 150°C junction temperature
TO-252-3 (DPAK) surface-mount package
6.9nC at 10V gate-source voltage
Maximum 3.75V at 250µA drain current