| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STD7N60M2 is an N-Channel MOSFET with a maximum drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 5A at a case temperature (Tc). It features a low on-resistance (Rds On) of 950mOhm at 2.5A and 10V gate-source voltage, with a gate charge (Qg) of 8.8nC at 10V.
This MOSFET is constructed using Metal Oxide technology and has an input capacitance (Ciss) of 271pF at 100V. The gate-to-source voltage (Vgs) maximum is ±25V, and the gate threshold voltage (Vgs(th)) is 4V at 250µA.
Packaged in a surface-mount DPAK (TO-252-3, DPak (2 Leads + Tab), SC-63) format, the STD7N60M2 is suitable for various power management applications. It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 60W at Tc.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) for the STD7N60M2 is 600V.
The continuous drain current (Id) for the STD7N60M2 is 5A.
The maximum on-resistance (Rds On) for the STD7N60M2 is 950mOhm at 2.5A and 10V.
The STD7N60M2 is available in a surface mount DPAK package (TO-252-3, DPak (2 Leads + Tab), SC-63).
The operating temperature range for the STD7N60M2 is -55°C to 150°C (TJ).