| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STD7LN80K5 is a high-voltage N-Channel MOSFET housed in a TO-252-3, DPak (2 Leads + Tab), SC-63 package. It is designed for surface mount applications and offers a maximum drain-source voltage (Vdss) of 800V and a continuous drain current (Id) of 5A (Tc).
Key electrical characteristics include a maximum gate-source voltage (Vgs) of ±30V, a gate threshold voltage (Vgs(th)) of 5V at 100µA, and a maximum on-resistance (Rds On) of 1.15 Ohms at 2.5A and 10V. The input capacitance (Ciss) is 270 pF at 100V, and the gate charge (Qg) is 12 nC at 10V.
With a maximum power dissipation of 85W (Tc) and an operating temperature range of -55°C to 150°C (TJ), this MOSFET is suitable for various power switching applications. The technology employed is MOSFET (Metal Oxide).
This component is supplied in a DPAK package, suitable for surface mounting. It is classified under Transistors - FETs, MOSFETs - Single category.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
800V.
TO-252-3, DPak (2 Leads + Tab), SC-63 (DPAK).
-55°C to 150°C (junction).
1.15 Ohm at 2.5A, 10V.
12 nC at 10V.
270 pF at 100V.
5A (case temperature).