| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STD7ANM60N is a single N-Channel MOSFET with a maximum drain-to-source voltage of 600V and a continuous drain current of 5A. It offers a maximum on-resistance of 900mOhm at 2.5A and 10V gate-source voltage. The MOSFET operates at temperatures up to 150°C (TJ) and has a maximum power dissipation of 45W (Tc).
This device utilizes MOSFET technology and is housed in a surface-mount DPAK package (TO-252-3, DPak (2 Leads + Tab), SC-63). The maximum gate source voltage is ±25V, with a gate threshold voltage of 4V at 250µA. Input capacitance (Ciss) is a maximum of 363pF at 50V, and gate charge (Qg) is a maximum of 14nC at 10V.
Designed for various power switching applications, the STD7ANM60N is suitable for use where high voltage and moderate current handling are required. Its surface-mount package facilitates integration into compact electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V maximum.
Surface mount DPAK (TO-252) package.
150°C junction temperature.
900mOhm maximum at 2.5A and 10V gate drive.
14nC at 10V gate drive.
5A at case temperature.