| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
15,000 pcs
|
15000 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STD6NM60N is an N-Channel MOSFET with a 600V drain-to-source voltage and a continuous drain current of 4.6A at 25°C (Tc). It utilizes MOSFET (Metal Oxide) technology and is housed in a surface-mount DPAK package (TO-252-3, DPak).
Key electrical characteristics include a maximum on-resistance of 920mOhm at 2.3A and 10V, a gate threshold voltage of 4V at 250µA, and a maximum gate charge of 13nC at 10V. The input capacitance (Ciss) is rated at 420pF maximum at 50V. The device operates within a temperature range of -55°C to 150°C (TJ) and can dissipate up to 45W (Tc).
This MOSFET is suitable for various power electronics applications requiring efficient switching and high voltage handling. Its surface-mount DPAK package facilitates integration into compact circuit designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 600V.
The continuous drain current (Id) is 4.6A at 25°C (Tc).
The maximum on-resistance (Rds On) is 920mOhm at 2.3A drain current and 10V gate-source voltage.
The operating temperature range is -55°C to 150°C (TJ).
The MOSFET is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, which is a surface mount type.