| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,500 pcs
|
7500 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STD6N90K5 is a high-voltage N-Channel MOSFET. It offers a Drain to Source Voltage (Vdss) of 900V and a continuous drain current rating of 6A at the case temperature.
This MOSFET has a maximum On-Resistance (Rds On) of 1.1 Ohm when tested at 3A and 10V gate drive voltage. The gate-to-source voltage (Vgs) is rated up to ±30V, with a threshold voltage (Vgs(th)) of 5V at 100µA. The device operates within a temperature range of -55°C to 150°C (TJ).
Designed with MOSFET (Metal Oxide) technology, the STD6N90K5 is suitable for various power switching applications. It is housed in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, designed for surface mounting.
Key electrical characteristics include a maximum power dissipation of 110W (Tc) and a gate drive voltage of 10V.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
900V.
TO-252-3 (DPAK).
-55°C to 150°C.
6A.
1.1Ohm at 3A, 10V.
5V at 100µA.
110W.