| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
38,520 pcs
|
38520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This STMicroelectronics STB6N60M2 is an N-Channel MOSFET with a robust 600V drain-to-source voltage rating. It is designed for surface mount applications and comes in a DPAK package (TO-252-3, SC-63).
Key electrical characteristics include a maximum continuous drain current of 4.5A (at case temperature) and a maximum power dissipation of 60W (at case temperature). The gate-to-source voltage range is ±25V, with a threshold voltage of 4V at 250µA. Input capacitance is rated at 232 pF at 100V, and gate charge is 8 nC at 10V. The on-resistance is a maximum of 1.2 Ohms at 2.25A and 10V.
The MOSFET operates within a temperature range of -55°C to 150°C (TJ). Its surface mount design facilitates integration into compact electronic circuits. The technology employed is MOSFET (Metal Oxide).
This component is suitable for various power switching and control applications where a 600V rating and surface mount capability are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
4.5A at case temperature.
1.2Ohm maximum at 2.25A and 10V gate drive.
TO-252-3 (DPAK) surface mount package.
-55°C to 150°C junction temperature.
8 nC at 10V gate-to-source voltage.
232 pF at 100V drain-to-source voltage.