| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,500 pcs
|
7500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STD6N60DM2 is an N-Channel enhancement-mode power MOSFET manufactured by STMicroelectronics using MDmesh DM2 technology. It is designed for high-voltage switching applications requiring low gate charge and fast switching performance.
Key electrical specifications include a maximum drain-to-source voltage of 600V, continuous drain current of 5A at case temperature, and a maximum on-resistance of 1.1Ohm at 2.5A and 10V gate drive. The device has a typical gate charge of 6.2nC at 10V and input capacitance of 274pF at 100V, enabling efficient high-frequency operation.
The MOSFET is housed in a surface-mount DPAK (TO-252) package with three leads and a tab for thermal management. Maximum power dissipation is 60W at case temperature, and the operating junction temperature range is -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 600V.
The continuous drain current is 5A at case temperature.
The maximum on-resistance (Rds(on)) is 1.1Ohm at 2.5A drain current and 10V gate voltage.
The STD6N60DM2 is offered in a surface-mount DPAK (TO-252) package with three leads and a tab.
The operating junction temperature range is -55°C to 150°C.