| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STD65N55F3 is an N-Channel MOSFET designed for power switching applications. It features a maximum drain-source voltage (Vdss) of 55V and a continuous drain current (Id) of 80A at a case temperature of Tc. The on-resistance (Rds On) is a maximum of 8.5mOhm at 32A and 10V gate-source voltage.
This MOSFET operates within a temperature range of -55°C to 175°C (TJ). Key electrical parameters include a gate charge (Qg) of 45 nC at 10V and an input capacitance (Ciss) of 2200 pF at 25V. The maximum gate-source voltage is ±20V, and the gate threshold voltage (Vgs(th)) is 4V at 250µA.
The device is housed in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, suitable for surface mounting. Its technology is based on MOSFET (Metal Oxide) principles, offering efficient power handling with a maximum power dissipation of 110W (Tc).
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
55V.
80A at case temperature.
8.5mOhm at 32A and 10V.
45nC at 10V.
-55°C to 175°C.
TO-252-3 DPAK surface mount.
4V at 250µA.