| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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420 pcs
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420 pcs | On Request | 1 | On Request | On Request | 03+ | On Request | On Request |
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The STMicroelectronics STD5NM601 is an N-Channel MOSFET belonging to the MDmesh™ series. It features a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 5A at 25°C.
This MOSFET has a maximum on-resistance (Rds On) of 1 Ohm at 2.5A and 10V gate drive voltage. The gate threshold voltage (Vgs(th)) is a maximum of 5V at 250µA. Key electrical parameters include a gate charge (Qg) of 18 nC maximum at 10V and an input capacitance (Ciss) of 400 pF maximum at 25V.
With a maximum power dissipation of 96W, the STD5NM601 operates within a temperature range of -55°C to 150°C. It is housed in an IPAK package and designed for through-hole mounting.
This component is suitable for applications requiring high voltage switching and power management.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the STD5NM601 is 600V.
The continuous drain current (Id) at 25°C for the STD5NM601 is 5A.
The maximum on-resistance (Rds On) is 1 Ohm at 2.5A drain current and 10V gate drive voltage.
The operating temperature range for the STD5NM601 is -55°C to 150°C.
The STD5NM601 MOSFET is in an IPAK package.
The STD5NM601 is mounted using the Through Hole method.