| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,850 pcs
|
8850 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,965 pcs
|
1965 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request | |
|
163 pcs
|
163 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STD5NM60-1 is an N-Channel MOSFET designed for various electronic applications. It offers a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 5A at 25°C. The MOSFET has a maximum on-resistance (Rds On) of 1 Ohm at 2.5A and 10V gate drive voltage.
Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 5V at 250µA and a maximum gate-source voltage (Vgs) of ±30V. The input capacitance (Ciss) is rated at 400 pF at 25V, and the gate charge (Qg) is a maximum of 18 nC at 10V. The device has a maximum power dissipation of 96W (Tc).
This MOSFET is suitable for applications requiring high voltage and current handling. It is packaged in an IPAK (TO-251-3 Short Leads, TO-251AA) and features Through Hole mounting, making it convenient for board assembly. The operating temperature range is from -55°C to 150°C (TJ).
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 600V.
It comes in a through-hole TO-251 IPak package.
It operates from -55°C to 150°C junction temperature.
5A at 25°C case temperature.
1 Ohm at 2.5A and 10V gate drive.
Maximum 18 nC at 10V gate voltage.
96W at case temperature.